EMB52T2R
- Mfr.Part #
- EMB52T2R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- PNP+PNP DIGITAL TRANSISTOR (WITH
- Stock
- 8,000
- In Stock :
- 8,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Cut Tape
- Current - Collector (Ic) (Max) :
- 100mA
- Supplier Device Package :
- EMT6
- Continuous Collector Current :
- 100mA
- Series :
- -
- Polarity/Channel Type :
- PNP
- Pin Count :
- 6
- Minimum DC Current Gain :
- 80
- Typical Resistor Ratio :
- 1
- Surface Mount :
- yes
- Resistor - Base (R1) :
- 47kOhms
- Subcategory :
- Transistors
- Product Status :
- Active
- Collector-Emitter Voltage-Max :
- 50 V
- Number of Elements per Chip :
- 2
- Product Type :
- BJTs - Bipolar Transistors - Pre-Biased
- JESD-30 Code :
- R-PDSO-F6
- DC Current Gain-Min (hFE) :
- 80
- Product Category :
- Bipolar Transistors - Pre-Biased
- Manufacturer :
- Rohm Semiconductor
- Package / Case :
- SOT-563, SOT-666
- Transistor Type :
- 2 PNP Pre-Biased (Dual)
- Mounting Style :
- SMD/SMT
- Resistor - Emitter Base (R2) :
- 47kOhms
- Number of Terminals :
- 6
- Collector Current-Max (IC) :
- 0.1 A
- Terminal Position :
- Dual
- Package Type :
- SOT-563
- Configuration :
- Dual
- Brand :
- Rohm Semiconductor
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Power Dissipation :
- 150mW
- Package :
- Digi-Reel?
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500μA, 5mA
- Lifecycle Status :
- Production (Last Updated: 2 years ago)
- Power - Max :
- 150mW
- RoHS :
- Details
- MSL :
- MSL 1 - Unlimited
- Current - Collector Cutoff (Max) :
- 500nA
- Qualification :
- -
- Number of Elements :
- 2
- Mount :
- Surface Mount
- Output Voltage :
- 150 mV
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Transistor Polarity :
- Dual PNP
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Terminal Form :
- Flat
- Frequency - Transition :
- 250MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Datasheets
- EMB52T2R

EMB52T2R datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Rohm Semiconductor stock available at
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