DTB143ECT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max :

200mW

Polarity/Channel Type :

PNP

Frequency - Transition :

200MHz

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

VCEsat-Max :

0.3 V

Max Collector Current :

500mA

Collector Emitter Voltage (VCEO) :

300mV

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

Factory Lead Time :

13 Weeks

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pin Count :

3

Operating Temperature (Max) :

150°C

Number of Elements :

1

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

JESD-30 Code :

R-PDSO-G3

Transition Frequency :

200MHz

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

47 @ 50mA 5V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Collector Emitter Breakdown Voltage :

50V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

3

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

4.7 k Ω

JESD-609 Code :

e1

Resistor - Base (R1) :

4.7 k Ω

Transistor Type :

PNP - Pre-Biased

Configuration :

SINGLE WITH BUILT-IN RESISTOR

HTS Code :

8541.21.00.75

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

200mW

Qualification Status :

Not Qualified