DTB113ZSTP

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Published :

2004

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Current Rating :

-500mA

Lead Free :

Lead Free

Transition Frequency :

200MHz

VCEsat-Max :

0.3 V

Voltage - Rated DC :

-50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

10

hFE Min :

56

HTS Code :

8541.21.00.75

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

300mV

Transistor Type :

PNP - Pre-Biased

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

Polarity :

PNP

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Resistor - Emitter Base (R2) :

10 k Ω

Resistor - Base (R1) :

1 k Ω

Frequency - Transition :

200MHz

Transistor Element Material :

SILICON

Pin Count :

3

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Package / Case :

SC-72 Formed Leads

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

300mW

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

TIN SILVER COPPER

Element Configuration :

Single

Max Collector Current :

500mA

Packaging :

Tape and Box (TB)

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

DTB113