DSS4240T-7
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- Mfr.Part #
- DSS4240T-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 2A SOT23-3
- Stock
- 83
- In Stock ：
- 83
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 40V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 320mV
- Radiation Hardening :
- No
- Additional Feature :
- High Reliability
- Terminal Position :
- Dual
- Pin Count :
- 3
- Height :
- 1mm
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 40V
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 40V
- hFE Min :
- 350
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Max Power Dissipation :
- 600mW
- Width :
- 1.3mm
- Base Part Number :
- DSS4240
- Lead Free :
- Lead Free
- Termination :
- SMD/SMT
- Max Collector Current :
- 2A
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 7.994566mg
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- JESD-609 Code :
- e3
- Power Dissipation :
- 600mW
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Frequency :
- 100MHz
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Datasheets
- DSS4240T-7
DSS4240T-7 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS4240T-7 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 320mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 2A volts.
DSS4240T-7 Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DSS4240T-7 Applications
There are a lot of Diodes Incorporated
DSS4240T-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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