DSS4160U-7

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Mfr.Part #
DSS4160U-7
Manufacturer
Diodes Incorporated
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS NPN 60V 1A SOT323
Stock
6,121
In Stock :
6,121

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
60V
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
260
Emitter Base Voltage (VEBO) :
5V
ECCN Code :
EAR99
Gain Bandwidth Product :
150MHz
Terminal Form :
Gull wing
Transistor Type :
NPN
Max Power Dissipation :
400mW
Number of Terminations :
3
Lead Free :
Lead Free
Transition Frequency :
150MHz
Radiation Hardening :
No
Frequency :
150MHz
Time@Peak Reflow Temperature-Max (s) :
40
Published :
2009
Pin Count :
3
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
6.010099mg
Vce Saturation (Max) @ Ib, Ic :
280mV @ 100mA, 1A
Terminal Finish :
Matte Tin (Sn)
Collector Emitter Saturation Voltage :
280mV
Height :
1mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 5V
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
80V
REACH SVHC :
No SVHC
Termination :
SMD/SMT
Number of Pins :
3
Collector Emitter Breakdown Voltage :
60V
hFE Min :
250
Current - Collector Cutoff (Max) :
100nA
Base Part Number :
DSS4160
Polarity/Channel Type :
NPN
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
Transistor Element Material :
SILICON
Package / Case :
SC-70, SOT-323
Length :
2.15mm
Pbfree Code :
yes
Width :
1.3mm
Factory Lead Time :
15 Weeks
Max Breakdown Voltage :
60V
Power Dissipation :
400mW
Max Collector Current :
1A
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS4160U-7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Base Part Number:DSS4160, Package / Case:SC-70, SOT-323, DSS4160U-7 pinout, DSS4160U-7 datasheet PDF, DSS4160U-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS4160U-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DSS4160U-7


NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount

DSS4160U-7 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 5V.With a collector emitter saturation voltage of 280mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 280mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.

DSS4160U-7 Features


the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 280mV
the vce saturation(Max) is 280mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz


DSS4160U-7 Applications


There are a lot of Diodes Incorporated
DSS4160U-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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