DSS4220V-7
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- Mfr.Part #
- DSS4220V-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN 20V 2A SOT563
- Stock
- 62,698
- In Stock ：
- 62,698
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- DSS4220
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Width :
- 1.2mm
- Published :
- 2009
- Termination :
- SMD/SMT
- Height :
- 600μm
- Terminal Form :
- Flat
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 20V
- Number of Pins :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 260MHz
- Gain Bandwidth Product :
- 260MHz
- Package / Case :
- SOT-563, SOT-666
- Number of Terminations :
- 6
- Power Dissipation :
- 600mW
- Length :
- 1.6mm
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 220
- Pin Count :
- 6
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 12 Weeks
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- Weight :
- 3.005049mg
- Collector Emitter Breakdown Voltage :
- 20V
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 20V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 600mW
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Datasheets
- DSS4220V-7
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
DSS4220V-7 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 260MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 2A volts.
DSS4220V-7 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 260MHz
DSS4220V-7 Applications
There are a lot of Diodes Incorporated
DSS4220V-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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