DSS4160V-7

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Mfr.Part #
DSS4160V-7
Manufacturer
Diodes Incorporated
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
TRANS NPN 60V 1A SOT563
Stock
182,197
In Stock :
182,197

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
250mV
Mount :
Surface Mount
Emitter Base Voltage (VEBO) :
5V
REACH SVHC :
No SVHC
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
60V
Package / Case :
SOT-563, SOT-666
Terminal Position :
Dual
Polarity/Channel Type :
NPN
Max Collector Current :
1A
Pin Count :
6
Collector Base Voltage (VCBO) :
80V
Width :
1.2mm
Radiation Hardening :
No
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
250mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 5V
Base Part Number :
DSS4160
Max Power Dissipation :
600mW
Packaging :
Tape and Reel (TR)
Height :
600μm
Factory Lead Time :
12 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
150MHz
Current - Collector Cutoff (Max) :
100nA
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
NPN
Published :
2009
ECCN Code :
EAR99
Frequency :
150MHz
Power Dissipation :
600mW
Lead Free :
Lead Free
Length :
1.6mm
Number of Pins :
6
Weight :
3.005049mg
Max Breakdown Voltage :
60V
Continuous Collector Current :
1A
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn)
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Flat
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
60V
Gain Bandwidth Product :
150MHz
Number of Terminations :
6
RoHS Status :
ROHS3 Compliant
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS4160V-7 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-563, SOT-666, Mounting Type:Surface Mount, Base Part Number:DSS4160, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Number of Terminations:6, DSS4160V-7 pinout, DSS4160V-7 datasheet PDF, DSS4160V-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS4160V-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DSS4160V-7


NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount

DSS4160V-7 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.

DSS4160V-7 Features


the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz


DSS4160V-7 Applications


There are a lot of Diodes Incorporated
DSS4160V-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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