DSS4160V-7
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- Mfr.Part #
- DSS4160V-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT563
- Stock
- 182,197
- In Stock ：
- 182,197
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Number of Pins :
- 6
- Height :
- 600μm
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 6
- Transistor Element Material :
- SILICON
- Weight :
- 3.005049mg
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Continuous Collector Current :
- 1A
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Frequency :
- 150MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Terminations :
- 6
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 600mW
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Package / Case :
- SOT-563, SOT-666
- Number of Elements :
- 1
- Max Power Dissipation :
- 600mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Current - Collector Cutoff (Max) :
- 100nA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2009
- Transition Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 12 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Base Part Number :
- DSS4160
- Terminal Form :
- Flat
- Length :
- 1.6mm
- Width :
- 1.2mm
- Datasheets
- DSS4160V-7
DSS4160V-7 Documents
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
DSS4160V-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DSS4160V-7 Features
the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS4160V-7 Applications
There are a lot of Diodes Incorporated
DSS4160V-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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