DSS4160V-7
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- Mfr.Part #
- DSS4160V-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT563
- Stock
- 182,197
- In Stock ：
- 182,197
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 250mV
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- SOT-563, SOT-666
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1A
- Pin Count :
- 6
- Collector Base Voltage (VCBO) :
- 80V
- Width :
- 1.2mm
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Base Part Number :
- DSS4160
- Max Power Dissipation :
- 600mW
- Packaging :
- Tape and Reel (TR)
- Height :
- 600μm
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 150MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Published :
- 2009
- ECCN Code :
- EAR99
- Frequency :
- 150MHz
- Power Dissipation :
- 600mW
- Lead Free :
- Lead Free
- Length :
- 1.6mm
- Number of Pins :
- 6
- Weight :
- 3.005049mg
- Max Breakdown Voltage :
- 60V
- Continuous Collector Current :
- 1A
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Flat
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 150MHz
- Number of Terminations :
- 6
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- DSS4160V-7
DSS4160V-7 Documents
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
DSS4160V-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DSS4160V-7 Features
the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS4160V-7 Applications
There are a lot of Diodes Incorporated
DSS4160V-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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