DSS4160V-7

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Mfr.Part #
DSS4160V-7
Manufacturer
Diodes Incorporated
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
TRANS NPN 60V 1A SOT563
Stock
182,197
In Stock :
182,197

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Form :
Flat
Number of Terminations :
6
Lead Free :
Lead Free
Radiation Hardening :
No
Transistor Element Material :
SILICON
Max Collector Current :
1A
Terminal Position :
Dual
Power Dissipation :
600mW
Max Breakdown Voltage :
60V
Height :
600μm
Transition Frequency :
150MHz
Weight :
3.005049mg
Gain Bandwidth Product :
150MHz
Length :
1.6mm
Collector Emitter Voltage (VCEO) :
60V
Current - Collector Cutoff (Max) :
100nA
Continuous Collector Current :
1A
Pin Count :
6
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Collector Emitter Saturation Voltage :
250mV
REACH SVHC :
No SVHC
Transistor Type :
NPN
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
40
Max Power Dissipation :
600mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 5V
Mount :
Surface Mount
Number of Elements :
1
Frequency :
150MHz
JESD-609 Code :
e3
Number of Pins :
6
Collector Base Voltage (VCBO) :
80V
Width :
1.2mm
Package / Case :
SOT-563, SOT-666
Peak Reflow Temperature (Cel) :
260
Base Part Number :
DSS4160
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
60V
Mounting Type :
Surface Mount
Factory Lead Time :
12 Weeks
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
NPN
Published :
2009
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
5V
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
250mV @ 100mA, 1A
Datasheets
DSS4160V-7
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS4160V-7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Package / Case:SOT-563, SOT-666, Base Part Number:DSS4160, Mounting Type:Surface Mount, DSS4160V-7 pinout, DSS4160V-7 datasheet PDF, DSS4160V-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS4160V-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DSS4160V-7


NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount

DSS4160V-7 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.

DSS4160V-7 Features


the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz


DSS4160V-7 Applications


There are a lot of Diodes Incorporated
DSS4160V-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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