DSS4160DS-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency - Transition :

220MHz

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100mA, 1A

Package / Case :

SOT-23-6

Reference Standard :

AEC-Q101

Max Collector Current :

1A

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Factory Lead Time :

15 Weeks

Collector Base Voltage (VCBO) :

80V

Transistor Type :

2 NPN (Dual)

Operating Temperature :

-55°C~150°C TJ

Published :

2013

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 5V

Transition Frequency :

220MHz

Collector Emitter Breakdown Voltage :

60V

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS

Mount :

Surface Mount

Power - Max :

700mW

Radiation Hardening :

No

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

ECCN Code :

EAR99

Max Power Dissipation :

700mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

250mV

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Transistor Element Material :

SILICON

Max Breakdown Voltage :

60V

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Form :

Gull wing