DSS4160FDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transition Frequency :

175MHz

Number of Terminations :

6

Pbfree Code :

yes

Max Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

2 NPN (Dual)

Power - Max :

405mW

Configuration :

SEPARATE, 2 ELEMENTS

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

60V

Collector Emitter Voltage (VCEO) :

240mV

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Packaging :

Tape and Reel (TR)

Package / Case :

6-UDFN Exposed Pad

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 2V

Transistor Application :

SWITCHING

JESD-609 Code :

e4

Published :

2016

Frequency - Transition :

175MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Form :

NO LEAD

JESD-30 Code :

S-PDSO-N6

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Elements :

2

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Vce Saturation (Max) @ Ib, Ic :

240mV @ 50mA, 1A

Case Connection :

COLLECTOR

Max Collector Current :

1A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

405mW

Polarity/Channel Type :

NPN