DP0150BLP4-7
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- Mfr.Part #
- DP0150BLP4-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A 3DFN
- Stock
- 33,645
- In Stock ：
- 33,645
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Published :
- 2011
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e4
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 80MHz
- Height :
- 350μm
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 80MHz
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 450mW
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- High Reliability
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 1mm
- Max Breakdown Voltage :
- 50V
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Width :
- 600μm
- Transistor Type :
- NPN
- Power - Max :
- 450mW
- Polarity :
- PNP
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- 3-XFDFN
- Number of Terminations :
- 3
- Factory Lead Time :
- 16 Weeks
- Collector Emitter Breakdown Voltage :
- 50V
- Datasheets
- DP0150BLP4-7
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON 3-XFDFN Tape & Reel (TR) Surface Mount
DP0150BLP4-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 80MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
DP0150BLP4-7 Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
DP0150BLP4-7 Applications
There are a lot of Diodes Incorporated
DP0150BLP4-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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