DP0150ADJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Width :

800μm

Polarity :

PNP

Pbfree Code :

yes

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

15 Weeks

Number of Elements :

2

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Frequency :

80MHz

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

50V

Gain Bandwidth Product :

80MHz

Transistor Type :

2 PNP (Dual)

Transistor Element Material :

SILICON

Transition Frequency :

80MHz

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

Pin Count :

6

Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

100mA

Collector Base Voltage (VCBO) :

50V

Max Breakdown Voltage :

50V

Length :

1mm

Radiation Hardening :

No

Package / Case :

SOT-963

Published :

2009

Base Part Number :

DP0150AD

Height :

450μm

REACH SVHC :

No SVHC

Max Power Dissipation :

300mW