DP0150ADJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency :

80MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation :

300mW

REACH SVHC :

No SVHC

Height :

450μm

Element Configuration :

Dual

Transition Frequency :

80MHz

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Tape and Reel (TR)

Length :

1mm

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Factory Lead Time :

15 Weeks

Emitter Base Voltage (VEBO) :

5V

Package / Case :

SOT-963

Mount :

Surface Mount

Number of Terminations :

6

Gain Bandwidth Product :

80MHz

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e3

Pbfree Code :

yes

Width :

800μm

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

50V

ECCN Code :

EAR99

Pin Count :

6

Transistor Type :

2 PNP (Dual)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

300mW

Polarity :

PNP

Number of Pins :

6

Base Part Number :

DP0150AD