DP0150BLP4-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

-5V

Number of Pins :

3

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

-50V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Max Breakdown Voltage :

50V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Factory Lead Time :

15 Weeks

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

-300mV

Published :

2011

Max Power Dissipation :

450mW

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Mounting Type :

Surface Mount

Gain Bandwidth Product :

80MHz

Transition Frequency :

80MHz

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e4

Collector Emitter Voltage (VCEO) :

300mV

Power - Max :

450mW

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Terminal Position :

BOTTOM

Case Connection :

COLLECTOR

Continuous Collector Current :

-100mA

Package / Case :

3-XFDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Pin Count :

3