DP0150ALP4-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e4

Number of Terminations :

3

Published :

2011

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Max Breakdown Voltage :

50V

Polarity/Channel Type :

PNP

Number of Pins :

3

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

-5V

Max Power Dissipation :

450mW

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

BOTTOM

Max Collector Current :

100mA

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

Gain Bandwidth Product :

80MHz

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

300mV

Number of Elements :

1

Collector Emitter Breakdown Voltage :

50V

Package / Case :

3-XFDFN

Additional Feature :

High Reliability

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

-50V

Mounting Type :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Power - Max :

450mW

Collector Emitter Saturation Voltage :

-300mV

Packaging :

Tape and Reel (TR)

Pin Count :

3

Transition Frequency :

80MHz

Continuous Collector Current :

-100mA

Factory Lead Time :

15 Weeks

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Transistor Type :

PNP

ECCN Code :

EAR99