DP0150ALP4-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Number of Elements :

1

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

Case Connection :

COLLECTOR

Radiation Hardening :

No

Package / Case :

3-XFDFN

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Published :

2011

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Transition Frequency :

80MHz

Power - Max :

450mW

Collector Emitter Voltage (VCEO) :

300mV

Transistor Type :

PNP

ECCN Code :

EAR99

Mount :

Surface Mount

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

-100mA

Additional Feature :

High Reliability

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e4

Gain Bandwidth Product :

80MHz

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

15 Weeks

Collector Emitter Saturation Voltage :

-300mV

Terminal Position :

BOTTOM

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

-5V

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

-50V

Max Breakdown Voltage :

50V

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

450mW

Pin Count :

3