DP0150ALP4-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Factory Lead Time :

15 Weeks

Collector Emitter Saturation Voltage :

-300mV

Polarity/Channel Type :

PNP

JESD-609 Code :

e4

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

-50V

Max Power Dissipation :

450mW

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2011

Number of Terminations :

3

Max Collector Current :

100mA

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

-5V

Number of Pins :

3

Continuous Collector Current :

-100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Additional Feature :

High Reliability

ECCN Code :

EAR99

Package / Case :

3-XFDFN

Power - Max :

450mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

300mV

Max Breakdown Voltage :

50V

Pbfree Code :

yes

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Transition Frequency :

80MHz

Gain Bandwidth Product :

80MHz

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

Pin Count :

3

Transistor Type :

PNP