DP0150ALP4-7
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- Mfr.Part #
- DP0150ALP4-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A 3DFN
- Stock
- 9,350
- In Stock ：
- 9,350
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- High Reliability
- Pbfree Code :
- yes
- JESD-609 Code :
- e4
- Collector Emitter Voltage (VCEO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Transition Frequency :
- 80MHz
- Terminal Position :
- BOTTOM
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Max Power Dissipation :
- 450mW
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Length :
- 1mm
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 600μm
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Height :
- 350μm
- Current - Collector (Ic) (Max) :
- 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2011
- Package / Case :
- 3-XFDFN
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 80MHz
- Datasheets
- DP0150ALP4-7
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XFDFN Tape & Reel (TR) Surface Mount
DP0150ALP4-7 Overview
In this device, the DC current gain is 120 @ 2mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
DP0150ALP4-7 Features
the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
DP0150ALP4-7 Applications
There are a lot of Diodes Incorporated
DP0150ALP4-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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