DP0150BDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Transition Frequency :

80MHz

Package / Case :

SOT-963

Element Configuration :

Dual

Terminal Form :

Flat

Length :

1mm

Published :

2009

Height :

450μm

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Cut Tape (CT)

Number of Terminations :

6

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

50V

Operating Temperature :

-55°C~150°C TJ

Power - Max :

300mW

Current - Collector Cutoff (Max) :

100nA ICBO

Mount :

Surface Mount

Number of Pins :

6

Emitter Base Voltage (VEBO) :

5V

Pin Count :

6

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Max Collector Current :

100mA

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Polarity :

PNP

Number of Elements :

2

Gain Bandwidth Product :

80MHz

Transistor Type :

2 PNP (Dual)

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

300mW

Collector Emitter Breakdown Voltage :

50V

Max Breakdown Voltage :

50V

Width :

800μm

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)