DP0150BDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Length :

1mm

Width :

800μm

Transistor Type :

2 PNP (Dual)

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity :

PNP

Mount :

Surface Mount

Gain Bandwidth Product :

80MHz

Published :

2009

Transition Frequency :

80MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

300mW

Collector Emitter Breakdown Voltage :

50V

Height :

450μm

Package / Case :

SOT-963

Max Breakdown Voltage :

50V

REACH SVHC :

No SVHC

Factory Lead Time :

8 Weeks

Element Configuration :

Dual

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Pin Count :

6

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

50V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Power - Max :

300mW

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Number of Terminations :

6

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Flat

Radiation Hardening :

No

Pbfree Code :

yes

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

50V

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Peak Reflow Temperature (Cel) :

260