DP0150BDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Length :

1mm

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Mount :

Surface Mount

Radiation Hardening :

No

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

50V

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Dual

Transition Frequency :

80MHz

JESD-609 Code :

e3

Max Power Dissipation :

300mW

Factory Lead Time :

8 Weeks

Height :

450μm

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Power - Max :

300mW

Polarity :

PNP

Width :

800μm

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Published :

2009

Terminal Form :

Flat

ECCN Code :

EAR99

Pbfree Code :

yes

Max Breakdown Voltage :

50V

Package / Case :

SOT-963

Gain Bandwidth Product :

80MHz

Number of Elements :

2

Transistor Type :

2 PNP (Dual)