DNLS412E-13
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- Mfr.Part #
- DNLS412E-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-223
- Datasheet
- Download
- Description
- TRANS NPN 12V 4A SOT-223
- Stock
- 7,149
- In Stock ：
- 7,149
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Transition Frequency :
- 150MHz
- Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Height :
- 1.6mm
- Max Breakdown Voltage :
- 12V
- Collector Emitter Breakdown Voltage :
- 12V
- Packaging :
- Tape and Reel (TR)
- Weight :
- 7.994566mg
- Max Collector Current :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.5mm
- Factory Lead Time :
- 12 Weeks
- Max Power Dissipation :
- 1W
- Frequency :
- 150MHz
- Max Operating Temperature :
- 150°C
- Gain Bandwidth Product :
- 150MHz
- Collector Base Voltage (VCBO) :
- 12V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2008
- hFE Min :
- 500
- Collector Emitter Voltage (VCEO) :
- 12V
- Number of Elements :
- 1
- Length :
- 6.5mm
- Package / Case :
- SOT-223
- Polarity :
- NPN
- Mount :
- Surface Mount
- Datasheets
- DNLS412E-13
DNLS412E-13 Documents
1 Elements SOT-223 Tape & Reel (TR)
DNLS412E-13 Overview
Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 4A volts can be achieved.
DNLS412E-13 Features
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DNLS412E-13 Applications
There are a lot of Diodes Incorporated
DNLS412E-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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