DNLS350E-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

Terminal Position :

Dual

Collector Emitter Saturation Voltage :

290mV

Transistor Type :

NPN

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Base Part Number :

DNLS350

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Number of Pins :

4

Length :

6.5mm

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

50V

Emitter Base Voltage (VEBO) :

6V

Width :

3.5mm

Radiation Hardening :

No

Terminal Form :

Gull wing

Height :

1.6mm

Gain Bandwidth Product :

100MHz

Weight :

7.994566mg

Packaging :

Tape and Reel (TR)

Transition Frequency :

100MHz

Max Power Dissipation :

1W

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

60V

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Polarity/Channel Type :

NPN

Number of Terminations :

4

Max Collector Current :

3A

Element Configuration :

Single

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Factory Lead Time :

19 Weeks

Vce Saturation (Max) @ Ib, Ic :

290mV @ 200mA, 2A

Continuous Collector Current :

3A

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4