DNLS350E-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA ICBO

Height :

1.6mm

Transition Frequency :

100MHz

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

6V

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

NPN

Terminal Position :

Dual

Length :

6.5mm

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

NPN

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Max Collector Current :

3A

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

3A

Gain Bandwidth Product :

100MHz

Pbfree Code :

yes

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

1W

Mount :

Surface Mount

Width :

3.5mm

REACH SVHC :

No SVHC

Number of Pins :

4

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

290mV

Package / Case :

TO-261-4, TO-261AA

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

19 Weeks

Pin Count :

4

Base Part Number :

DNLS350

Element Configuration :

Single

Number of Terminations :

4

Published :

2008

Collector Base Voltage (VCBO) :

60V

Weight :

7.994566mg

Radiation Hardening :

No

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

290mV @ 200mA, 2A