DNLS160V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

60V

Number of Pins :

6

Mount :

Surface Mount

Length :

1.6mm

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

NPN

Collector Emitter Saturation Voltage :

250mV

Peak Reflow Temperature (Cel) :

260

Frequency :

270MHz

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

270MHz

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 1mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.2mm

Terminal Form :

Flat

Published :

2008

Frequency - Transition :

150MHz

Weight :

3.005049mg

Element Configuration :

Single

Pbfree Code :

yes

Power Dissipation :

300mW

ECCN Code :

EAR99

Max Collector Current :

1A

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100mA, 1A

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Package / Case :

SOT-563, SOT-666

Number of Elements :

1

Max Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Factory Lead Time :

19 Weeks

Collector Emitter Voltage (VCEO) :

60V

Collector Base Voltage (VCBO) :

80V

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Height :

600μm

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

60V

Current - Collector Cutoff (Max) :

100nA

Transition Frequency :

270MHz

Terminal Position :

Dual

Additional Feature :

High Reliability

Number of Terminations :

6

Polarity/Channel Type :

NPN