DNLS160V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

1.2mm

Transition Frequency :

270MHz

Collector Emitter Breakdown Voltage :

60V

Package / Case :

SOT-563, SOT-666

Max Collector Current :

1A

Current - Collector Cutoff (Max) :

100nA

Gain Bandwidth Product :

270MHz

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Frequency - Transition :

150MHz

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

60V

Transistor Type :

NPN

Published :

2008

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

250mV

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

60V

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 1mA 5V

Element Configuration :

Single

Power Dissipation :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Radiation Hardening :

No

Weight :

3.005049mg

Terminal Position :

Dual

Number of Terminations :

6

Collector Base Voltage (VCBO) :

80V

Height :

600μm

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

JESD-609 Code :

e3

Max Power Dissipation :

300mW

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

19 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100mA, 1A

Length :

1.6mm

Frequency :

270MHz

ECCN Code :

EAR99