DNLS350Y-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Current - Collector Cutoff (Max) :

100nA

Pin Count :

3

Pbfree Code :

yes

ECCN Code :

EAR99

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-F3

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Lead Free :

Lead Free

Max Breakdown Voltage :

50V

Factory Lead Time :

19 Weeks

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1W

Max Collector Current :

3A

Emitter Base Voltage (VEBO) :

5V

Length :

4.5mm

Number of Terminations :

3

Mount :

Surface Mount

Radiation Hardening :

No

Transistor Type :

NPN

Width :

2.5mm

Terminal Form :

Flat

Weight :

51.993025mg

Polarity :

PNP

Case Connection :

COLLECTOR

Package / Case :

TO-243AA

Element Configuration :

Single

Number of Elements :

1

Transition Frequency :

100MHz

Number of Pins :

4

Frequency :

100MHz

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Collector Base Voltage (VCBO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

DNLS350

Max Power Dissipation :

1W

Packaging :

Tape and Reel (TR)

Published :

2008

Height :

1.5mm

Transistor Element Material :

SILICON

Gain Bandwidth Product :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

370mV

Vce Saturation (Max) @ Ib, Ic :

370mV @ 300mA, 3A