DNLS350Y-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

19 Weeks

Operating Temperature :

-55°C~150°C TJ

Published :

2008

Base Part Number :

DNLS350

Length :

4.5mm

Collector Base Voltage (VCBO) :

50V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

100MHz

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Matte Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

JESD-609 Code :

e3

Max Power Dissipation :

1W

Mount :

Surface Mount

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

50V

Height :

1.5mm

Case Connection :

COLLECTOR

Radiation Hardening :

No

Package / Case :

TO-243AA

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

JESD-30 Code :

R-PSSO-F3

Pbfree Code :

yes

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

100nA

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Number of Elements :

1

ECCN Code :

EAR99

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

3A

Width :

2.5mm

Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

370mV @ 300mA, 3A

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Number of Pins :

4

Gain Bandwidth Product :

100MHz

Collector Emitter Saturation Voltage :

370mV

Polarity :

PNP

Pin Count :

3

Weight :

51.993025mg

Power Dissipation :

1W