DNLS320E-13

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Mfr.Part #
DNLS320E-13
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 20V 3A SOT223-3
Stock
2,908
In Stock :
2,908

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Matte Tin (Sn)
Polarity/Channel Type :
NPN
Transistor Type :
NPN
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
5V
Frequency :
150MHz
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
400 @ 2A 2V
Packaging :
Tape and Reel (TR)
Width :
3.5mm
Lead Free :
Lead Free
Terminal Position :
Dual
Current - Collector Cutoff (Max) :
100nA ICBO
Number of Terminations :
4
Max Power Dissipation :
1W
Collector Base Voltage (VCBO) :
20V
Collector Emitter Saturation Voltage :
450mV
Package / Case :
TO-261-4, TO-261AA
Pin Count :
4
ECCN Code :
EAR99
Max Collector Current :
3A
Manufacturer Package Identifier :
DNLS320E-13
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
4
Base Part Number :
DNLS320
Transistor Application :
SWITCHING
Height :
1.6mm
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
40
Weight :
7.994566mg
Mount :
Surface Mount
Factory Lead Time :
15 Weeks
REACH SVHC :
No SVHC
Transition Frequency :
150MHz
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
20V
Power Dissipation :
1W
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
450mV @ 20mA, 3A
Terminal Form :
Gull wing
Case Connection :
COLLECTOR
Max Breakdown Voltage :
20V
Gain Bandwidth Product :
150MHz
Published :
2008
JESD-609 Code :
e3
Length :
6.5mm
Transistor Element Material :
SILICON
Datasheets
DNLS320E-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DNLS320E-13 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Base Part Number:DNLS320, DNLS320E-13 pinout, DNLS320E-13 datasheet PDF, DNLS320E-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DNLS320E-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DNLS320E-13


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

DNLS320E-13 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 400 @ 2A 2V.The collector emitter saturation voltage is 450mV, which allows for maximum design flexibility.When VCE saturation is 450mV @ 20mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 3A volts can be achieved.

DNLS320E-13 Features


the DC current gain for this device is 400 @ 2A 2V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 20mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz


DNLS320E-13 Applications


There are a lot of Diodes Incorporated
DNLS320E-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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