DNLS160-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Weight :

7.994566mg

Height :

1.1mm

Factory Lead Time :

15 Weeks

Terminal Finish :

Matte Tin (Sn)

Current - Collector Cutoff (Max) :

100nA

Collector Emitter Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gain Bandwidth Product :

270MHz

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Pbfree Code :

yes

Max Collector Current :

1A

Polarity/Channel Type :

NPN

Pin Count :

3

Additional Feature :

High Reliability

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100mA, 1A

Number of Terminations :

3

Mount :

Surface Mount

Number of Elements :

1

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

80V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Max Power Dissipation :

300mW

Frequency :

270MHz

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 5V

Length :

3mm

Terminal Position :

Dual

Base Part Number :

DNLS160

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

60V

Collector Emitter Saturation Voltage :

250mV

Terminal Form :

Gull wing

Power Dissipation :

300mW

Transition Frequency :

270MHz

Width :

1.4mm