DMN66D0LDW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Input Capacitance :

23pF

Power Dissipation :

250mW

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 25V

Rds On Max :

5 Ω

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

6Ohm

Length :

2.2mm

Weight :

6.010099mg

Number of Channels :

2

Rds On (Max) @ Id, Vgs :

6Ohm @ 115mA, 5V

Max Operating Temperature :

150°C

Supplier Device Package :

SOT-363

Current - Continuous Drain (Id) @ 25°C :

115mA Ta

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

250mW

Power - Max :

250mW Ta

Continuous Drain Current (ID) :

115mA

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Turn-Off Delay Time :

33 ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

10 ns

Number of Pins :

6

Number of Elements :

2

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Feature :

Standard

Width :

1.35mm

Published :

2011

Drain to Source Breakdown Voltage :

60V

Series :

Automotive, AEC-Q101

Radiation Hardening :

No

Height :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-TSSOP, SC-88, SOT-363

REACH SVHC :

No SVHC

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

60V