DMN66D0LDW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Drain to Source Resistance :

6Ohm

Max Power Dissipation :

250mW

Rds On Max :

5 Ω

Turn-Off Delay Time :

33 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Standard

Current - Continuous Drain (Id) @ 25°C :

115mA Ta

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Width :

1.35mm

Input Capacitance :

23pF

Power Dissipation :

250mW

Published :

2011

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

60V

Mount :

Surface Mount

Supplier Device Package :

SOT-363

Series :

Automotive, AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.010099mg

Number of Elements :

2

Length :

2.2mm

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

10 ns

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Channels :

2

Rds On (Max) @ Id, Vgs :

6Ohm @ 115mA, 5V

Height :

1mm

Continuous Drain Current (ID) :

115mA

Number of Pins :

6

Vgs(th) (Max) @ Id :

2V @ 250μA

Power - Max :

250mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 25V