DMN65D8LDW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

JESD-609 Code :

e3

Width :

1.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

22pF @ 25V

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn On Delay Time :

3.3 ns

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

6 Ω @ 115mA, 10V

Additional Feature :

High Reliability

Published :

2013

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

15 Weeks

Transistor Element Material :

SILICON

Max Power Dissipation :

300mW

Resistance :

6Ohm

Turn-Off Delay Time :

12 ns

Power Dissipation :

300mW

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

0.87nC @ 10V

Peak Reflow Temperature (Cel) :

260

Base Part Number :

DMN65D8LDW

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Continuous Drain Current (ID) :

180mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Rise Time :

3.2ns

Terminal Form :

Gull wing

Weight :

6.010099mg

Drain to Source Breakdown Voltage :

60V

Length :

2.2mm

Pbfree Code :

yes

Height :

1.1mm

Fall Time (Typ) :

6.3 ns

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Number of Pins :

6

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

0.15A

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40