DMN63D8LV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

450mW

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

260mA

Input Capacitance (Ciss) (Max) @ Vds :

22pF @ 25V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

ECCN Code :

EAR99

Rise Time :

3.2ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Turn-Off Delay Time :

12 ns

Operating Mode :

ENHANCEMENT MODE

Width :

1.25mm

Threshold Voltage :

1.5V

Published :

2007

Package / Case :

SOT-563, SOT-666

Gate Charge (Qg) (Max) @ Vgs :

0.87nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Height :

600μm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

4.5Ohm

Terminal Form :

Flat

Turn On Delay Time :

3.3 ns

Number of Terminations :

6

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 250mA, 10V

Transistor Application :

SWITCHING

Max Power Dissipation :

450mW

Element Configuration :

Dual

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

30V

Reference Standard :

AEC-Q101

Fall Time (Typ) :

6.3 ns

Length :

1.7mm

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

High Reliability

Base Part Number :

DMN63D8L

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

FET Type :

2 N-Channel (Dual)