DMN63D8LV-7
- Mfr.Part #
- DMN63D8LV-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 0.26A SOT563
- Stock
- 48,779
- In Stock :
- 48,779
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Dual
- Number of Pins :
- 6
- REACH SVHC :
- No SVHC
- Height :
- 600μm
- FET Feature :
- Logic Level Gate
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 2
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 6.3 ns
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 6
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.25mm
- Max Power Dissipation :
- 450mW
- Base Part Number :
- DMN63D8L
- Published :
- 2007
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Length :
- 1.7mm
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 22pF @ 25V
- Mounting Type :
- Surface Mount
- Additional Feature :
- High Reliability
- Turn-Off Delay Time :
- 12 ns
- Rise Time :
- 3.2ns
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 2.8 Ω @ 250mA, 10V
- Factory Lead Time :
- 16 Weeks
- Reference Standard :
- AEC-Q101
- Power Dissipation :
- 450mW
- Packaging :
- Cut Tape (CT)
- Threshold Voltage :
- 1.5V
- Package / Case :
- SOT-563, SOT-666
- Gate Charge (Qg) (Max) @ Vgs :
- 0.87nC @ 10V
- Drain-source On Resistance-Max :
- 4.5Ohm
- FET Type :
- 2 N-Channel (Dual)
- Turn On Delay Time :
- 3.3 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Continuous Drain Current (ID) :
- 260mA
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Terminal Form :
- Flat
- Datasheets
- DMN63D8LV-7

DMN63D8LV-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at
The DMN63D8LV-7 is a MOSFET 2N-Channel 30V 0.26A SOT563 from Diodes Inc. It is a low voltage, low on-resistance, and low gate charge MOSFET that is suitable for a wide range of applications. It is designed to provide superior performance in a variety of switching and linear applications.
Features:
• Low voltage (30V)
• Low on-resistance (0.26A)
• Low gate charge
• High speed switching
• High current handling capability
• High reliability
• RoHS compliant
Applications:
The DMN63D8LV-7 is suitable for a wide range of applications, including:
• DC-DC converters
• Motor control
• Power management
• Automotive
• Industrial
• Lighting
• Audio/Video
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