DMN63D8LV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Number of Pins :

6

REACH SVHC :

No SVHC

Height :

600μm

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

Fall Time (Typ) :

6.3 ns

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

6

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Width :

1.25mm

Max Power Dissipation :

450mW

Base Part Number :

DMN63D8L

Published :

2007

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Length :

1.7mm

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

22pF @ 25V

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

Turn-Off Delay Time :

12 ns

Rise Time :

3.2ns

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 250mA, 10V

Factory Lead Time :

16 Weeks

Reference Standard :

AEC-Q101

Power Dissipation :

450mW

Packaging :

Cut Tape (CT)

Threshold Voltage :

1.5V

Package / Case :

SOT-563, SOT-666

Gate Charge (Qg) (Max) @ Vgs :

0.87nC @ 10V

Drain-source On Resistance-Max :

4.5Ohm

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

3.3 ns

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

260mA

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Form :

Flat