DMN63D8LDW-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2012

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

220mA

Radiation Hardening :

No

Rise Time :

3.2ns

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Pins :

6

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Drain Current-Max (Abs) (ID) :

0.22A

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

4.5Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

15 Weeks

Fall Time (Typ) :

6.3 ns

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 250mA, 10V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

22pF @ 25V

Turn On Delay Time :

3.3 ns

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

Package / Case :

6-TSSOP, SC-88, SOT-363

ECCN Code :

EAR99

Turn-Off Delay Time :

12 ns

Max Power Dissipation :

300mW

Number of Elements :

2

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

870nC @ 10V

Reference Standard :

AEC-Q101

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

1.5V @ 250µA