DMN62D0UDW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.35A

DS Breakdown Voltage-Min :

60V

Power - Max :

320mW

Input Capacitance (Ciss) (Max) @ Vds :

32pF @ 30V

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V

Factory Lead Time :

16 Weeks

JESD-30 Code :

R-PDSO-G6

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

320mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reference Standard :

AEC-Q101

Published :

2015

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Mount :

Surface Mount

Continuous Drain Current (ID) :

350mA

FET Feature :

Standard

ECCN Code :

EAR99

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 N-Channel (Dual)

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

2 Ω @ 100mA, 4.5V

Drain-source On Resistance-Max :

2Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Number of Elements :

2

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing