DMN61D8LVT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PDSO-G6

Factory Lead Time :

17 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

0.74nC @ 5V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

820mW

Drain-source On Resistance-Max :

2.4Ohm

Number of Terminations :

6

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 150mA, 5V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Published :

2015

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

820mW

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

12.9pF @ 12V

Continuous Drain Current (ID) :

630mA

Drain Current-Max (Abs) (ID) :

0.63A

Terminal Form :

Gull wing

Package / Case :

SOT-23-6 Thin, TSOT-23-6