DMN6066SSDQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Subcategory :

MOSFETs

Number of Elements :

2

Drain to Source Voltage (Vdss) :

60V

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

3.3A (Ta)

Number of Terminals :

8

Channel Type :

Dual N

Product Status :

Active

Technology :

Si

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

1.25W (Ta)

Terminal Finish :

Matte Tin (Sn)

RoHS :

Details

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PDSO-G8

Additional Feature :

High Reliability

Product Category :

MOSFET

ECCN Code :

EAR99

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.066 Ω

Product Type :

MOSFET

Packaging :

Reel

Supplier Device Package :

8-SOP

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Standard

Series :

Automotive, AEC-Q101

Mounting Type :

Surface Mount

Factory Lead Time :

17 Weeks

DS Breakdown Voltage-Min :

60 V

Package :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

10.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

502pF @ 30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Brand :

Diodes Incorporated

FET Type :

2 N-Channel (Dual)

Reference Standard :

AEC-Q101

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

66mOhm @ 4.5A, 10V

Terminal Position :

Dual