BUV27G

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Mfr.Part #
BUV27G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 120V 12A TO220
Stock
9,104
In Stock :
9,104

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
RoHS Status :
RoHS Compliant
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Polarity/Channel Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 800mA, 8A
Emitter Base Voltage (VEBO) :
7V
Number of Pins :
3
Collector Emitter Saturation Voltage :
1.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Pin Count :
3
Radiation Hardening :
No
ECCN Code :
EAR99
Voltage - Rated DC :
120V
Power Dissipation :
70W
JEDEC-95 Code :
TO-220AB
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 4 days ago)
Operating Temperature :
-65°C~150°C TJ
Surface Mount :
No
Number of Terminations :
3
Case Connection :
COLLECTOR
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Voltage (VCEO) :
120V
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
240V
Current Rating :
12A
Published :
2011
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Base Part Number :
BUV27
Packaging :
Tube
Factory Lead Time :
2 Weeks
Max Power Dissipation :
70W
Element Configuration :
Single
Number of Elements :
1
Transistor Type :
NPN
Collector Emitter Breakdown Voltage :
120V
Pbfree Code :
yes
Max Collector Current :
12A
Mounting Type :
Through Hole
Datasheets
BUV27G
Introducing Transistors - Bipolar (BJT) - Single onsemi BUV27G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Base Part Number:BUV27, Mounting Type:Through Hole, BUV27G pinout, BUV27G datasheet PDF, BUV27G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUV27G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUV27G


NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUV27G Overview


This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 800mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 12A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 12A volts is possible.

BUV27G Features


a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is 12A


BUV27G Applications


There are a lot of ON Semiconductor
BUV27G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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