BUV21G
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- Mfr.Part #
- BUV21G
- Manufacturer
- onsemi
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN 200V 40A TO204
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 2
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Saturation Voltage :
- 1.5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 40A
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Tray
- Contact Plating :
- Copper, Silver, Tin
- hFE Min :
- 20
- Number of Pins :
- 2
- Frequency :
- 8MHz
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Series :
- SWITCHMODE™
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Current Rating :
- 40A
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3A, 25A
- Collector Emitter Breakdown Voltage :
- 200V
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 8MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-204AE
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 3mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 250W
- Number of Terminations :
- 2
- Collector Emitter Voltage (VCEO) :
- 200V
- Max Power Dissipation :
- 250W
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 250V
- Element Configuration :
- Single
- Transition Frequency :
- 8MHz
- Factory Lead Time :
- 2 Weeks
- Terminal Form :
- PIN/PEG
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 12A 2V
- Datasheets
- BUV21G
NPN -65°C~200°C TJ 3mA 1 Elements 2 Terminations SILICON NPN TO-204AE Tray Through Hole
BUV21G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 12A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 3A, 25A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 40A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 8MHz.During maximum operation, collector current can be as low as 40A volts.
BUV21G Features
the DC current gain for this device is 20 @ 12A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 3A, 25A
the emitter base voltage is kept at 7V
the current rating of this device is 40A
a transition frequency of 8MHz
BUV21G Applications
There are a lot of ON Semiconductor
BUV21G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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