BUV20
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- Mfr.Part #
- BUV20
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 125V 50A TO3
- Stock
- 9,956
- In Stock ：
- 9,956
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 200°C TJ
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Base Part Number :
- BUV20
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 25A 2V
- Collector Base Voltage (VCBO) :
- 160V
- Power Dissipation :
- 250mW
- Case Connection :
- COLLECTOR
- Length :
- 39.3mm
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- hFE Min :
- 20
- Emitter Base Voltage (VEBO) :
- 7V
- Voltage - Rated DC :
- 125V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 5A, 50A
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Terminal Form :
- PIN/PEG
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 125V
- Transition Frequency :
- 8MHz
- Package / Case :
- TO-204AA, TO-3
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 50A
- Number of Pins :
- 2
- Mount :
- Chassis Mount, Through Hole
- Max Power Dissipation :
- 250W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 50A
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Weight :
- 907.18474mg
- Radiation Hardening :
- No
- Width :
- 26mm
- Height :
- 8.92mm
- Frequency - Transition :
- 8MHz
- Packaging :
- Tube
- Terminal Position :
- BOTTOM
- Mounting Type :
- Chassis Mount
- Collector Emitter Saturation Voltage :
- 700mV
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 125V
- Current - Collector Cutoff (Max) :
- 3mA
- Number of Elements :
- 1
- Number of Terminations :
- 2
- REACH SVHC :
- No SVHC
- Datasheets
- BUV20
BUV20 Documents
NPN 200°C TJ 3mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tube Chassis Mount
BUV20 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 25A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 5A, 50A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 8MHz.During maximum operation, collector current can be as low as 50A volts.
BUV20 Features
the DC current gain for this device is 20 @ 25A 2V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 1.2V @ 5A, 50A
the emitter base voltage is kept at 7V
the current rating of this device is 50A
a transition frequency of 8MHz
BUV20 Applications
There are a lot of STMicroelectronics
BUV20 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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