BUV26G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Pbfree Code :

yes

Height :

15.75mm

Collector Base Voltage (VCBO) :

180V

Number of Terminations :

3

Transition Frequency :

330MHz

Number of Elements :

1

Contact Plating :

Tin

Pin Count :

3

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

90V

ECCN Code :

EAR99

Transistor Type :

NPN

Max Collector Current :

20A

Max Breakdown Voltage :

90V

Polarity/Channel Type :

NPN

Surface Mount :

No

Base Part Number :

BUV26

Current Rating :

20A

Factory Lead Time :

2 Weeks

Max Power Dissipation :

85W

Lead Free :

Lead Free

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Published :

2002

Number of Pins :

3

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

1.5V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~175°C TJ

Power Dissipation :

85W

Length :

10.28mm

Voltage - Rated DC :

90V

Width :

4.82mm

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

7V

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1.2A, 12A

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Single

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB