BUV26G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

85W

Package / Case :

TO-220-3

RoHS Status :

RoHS Compliant

Collector Base Voltage (VCBO) :

180V

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Factory Lead Time :

2 Weeks

Width :

4.82mm

Pin Count :

3

Surface Mount :

No

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Collector Emitter Voltage (VCEO) :

90V

Number of Elements :

1

Height :

15.75mm

Radiation Hardening :

No

Length :

10.28mm

Lead Free :

Lead Free

Pbfree Code :

yes

Current Rating :

20A

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

7V

Transistor Type :

NPN

Number of Terminations :

3

Operating Temperature :

-65°C~175°C TJ

Polarity/Channel Type :

NPN

Voltage - Rated DC :

90V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

1.5V

Max Collector Current :

20A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Max Breakdown Voltage :

90V

Packaging :

Tube

Element Configuration :

Single

Power Dissipation :

85W

Transition Frequency :

330MHz

Case Connection :

COLLECTOR

Base Part Number :

BUV26

Mounting Type :

Through Hole

Published :

2002

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1.2A, 12A