BUV26G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

85W

Number of Pins :

3

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

90V

JESD-609 Code :

e3

Surface Mount :

No

Collector Emitter Breakdown Voltage :

50V

Collector Base Voltage (VCBO) :

180V

Length :

10.28mm

Max Breakdown Voltage :

90V

Number of Terminations :

3

Current Rating :

20A

Width :

4.82mm

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Published :

2002

Contact Plating :

Tin

Package / Case :

TO-220-3

Factory Lead Time :

2 Weeks

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

Height :

15.75mm

Base Part Number :

BUV26

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~175°C TJ

Number of Elements :

1

Element Configuration :

Single

REACH SVHC :

No SVHC

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Packaging :

Tube

Voltage - Rated DC :

90V

Pin Count :

3

Max Collector Current :

20A

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1.2A, 12A

JEDEC-95 Code :

TO-220AB

Collector Emitter Saturation Voltage :

1.5V

Emitter Base Voltage (VEBO) :

7V

ECCN Code :

EAR99

Transition Frequency :

330MHz

Max Power Dissipation :

85W

Transistor Type :

NPN