BUV26G

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Mfr.Part #
BUV26G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 90V 20A TO220
Stock
7,248
In Stock :
7,248

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Breakdown Voltage :
90V
Voltage - Rated DC :
90V
Number of Terminations :
3
Mounting Type :
Through Hole
Package / Case :
TO-220-3
Max Power Dissipation :
85W
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 3 days ago)
JEDEC-95 Code :
TO-220AB
REACH SVHC :
No SVHC
Operating Temperature :
-65°C~175°C TJ
Width :
4.82mm
Transistor Type :
NPN
Collector Emitter Saturation Voltage :
1.5V
Surface Mount :
No
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1.2A, 12A
Collector Base Voltage (VCBO) :
180V
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
50V
Factory Lead Time :
2 Weeks
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
40
Base Part Number :
BUV26
Number of Elements :
1
Element Configuration :
Single
RoHS Status :
RoHS Compliant
Transition Frequency :
330MHz
Pin Count :
3
Height :
15.75mm
Length :
10.28mm
Peak Reflow Temperature (Cel) :
260
Transistor Application :
SWITCHING
Power Dissipation :
85W
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
90V
Transistor Element Material :
SILICON
Case Connection :
COLLECTOR
JESD-609 Code :
e3
Radiation Hardening :
No
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Max Collector Current :
20A
Published :
2002
Current Rating :
20A
Contact Plating :
Tin
Emitter Base Voltage (VEBO) :
7V
Number of Pins :
3
Datasheets
BUV26G
Introducing Transistors - Bipolar (BJT) - Single onsemi BUV26G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-65°C~175°C TJ, Base Part Number:BUV26, Number of Pins:3, BUV26G pinout, BUV26G datasheet PDF, BUV26G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUV26G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUV26G


NPN -65°C~175°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUV26G Overview


A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1.2A, 12A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (20A).330MHz is present in the transition frequency.An input voltage of 90V volts is the breakdown voltage.Maximum collector currents can be below 20A volts.

BUV26G Features


a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1.2A, 12A
the emitter base voltage is kept at 7V
the current rating of this device is 20A
a transition frequency of 330MHz


BUV26G Applications


There are a lot of ON Semiconductor
BUV26G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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