BUV22G

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Mfr.Part #
BUV22G
Manufacturer
onsemi
Package / Case
TO-204AE
Datasheet
Download
Description
TRANS NPN 250V 40A TO204
Stock
1,768
In Stock :
1,768

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Power Dissipation :
250W
ECCN Code :
EAR99
Max Collector Current :
40A
Voltage - Rated DC :
250V
Package / Case :
TO-204AE
Frequency :
8MHz
Current Rating :
40A
Current - Collector Cutoff (Max) :
3mA
Number of Pins :
2
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Transition Frequency :
8MHz
Series :
SWITCHMODE™
Collector Emitter Breakdown Voltage :
250V
Operating Temperature :
-65°C~200°C TJ
Number of Terminations :
2
Collector Base Voltage (VCBO) :
300V
REACH SVHC :
No SVHC
Radiation Hardening :
No
Gain Bandwidth Product :
8MHz
Pin Count :
2
Pbfree Code :
yes
Terminal Position :
BOTTOM
Published :
2006
Max Power Dissipation :
250W
Case Connection :
COLLECTOR
Factory Lead Time :
2 Weeks
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Peak Reflow Temperature (Cel) :
260
Packaging :
Tray
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
250V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 10A 4V
Transistor Application :
SWITCHING
Terminal Form :
PIN/PEG
Element Configuration :
Single
Number of Elements :
1
hFE Min :
20
Collector Emitter Saturation Voltage :
1.5V
Contact Plating :
Copper, Silver, Tin
Emitter Base Voltage (VEBO) :
7V
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e1
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 2.5A, 20A
Mount :
Through Hole
Datasheets
BUV22G
Introducing Transistors - Bipolar (BJT) - Single onsemi BUV22G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-204AE, Number of Pins:2, Operating Temperature:-65°C~200°C TJ, Number of Terminations:2, Mounting Type:Through Hole, BUV22G pinout, BUV22G datasheet PDF, BUV22G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUV22G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUV22G


NPN -65°C~200°C TJ 3mA 1 Elements 2 Terminations SILICON NPN TO-204AE Tray Through Hole

BUV22G Overview


DC current gain in this device equals 20 @ 10A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 2.5A, 20A.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 40A current rating.As a result, the part has a transition frequency of 8MHz.In extreme cases, the collector current can be as low as 40A volts.

BUV22G Features


the DC current gain for this device is 20 @ 10A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2.5A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 40A
a transition frequency of 8MHz


BUV22G Applications


There are a lot of ON Semiconductor
BUV22G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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