BUJ106A,127
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- Mfr.Part #
- BUJ106A,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- NOW WEEN - BUJ106A - POWER BIPOL
- Stock
- 8,243
- In Stock ：
- 8,243
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 5V
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.2A, 6A
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Power - Max :
- 80W
- Current - Collector Cutoff (Max) :
- 100μA
- Reference Standard :
- IEC-134
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 10A
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Surface Mount :
- No
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Datasheets
- BUJ106A,127
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUJ106A,127 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 14 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 1.2A, 6A.This device displays a 400V maximum voltage - Collector Emitter Breakdown.
BUJ106A,127 Features
the DC current gain for this device is 14 @ 500mA 5V
the vce saturation(Max) is 1V @ 1.2A, 6A
BUJ106A,127 Applications
There are a lot of WeEn Semiconductors
BUJ106A,127 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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