BUJ105A,127
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- Mfr.Part #
- BUJ105A,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A TO220AB
- Stock
- 8,911
- In Stock ：
- 8,911
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 8A
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100μA
- Surface Mount :
- No
- Number of Elements :
- 1
- Packaging :
- Tube
- Reference Standard :
- IEC-134
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 13 @ 500mA 5V
- Transistor Type :
- NPN
- Power - Max :
- 80W
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- Polarity/Channel Type :
- NPN
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 800mA, 4A
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- COLLECTOR
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Terminal Position :
- Single
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Datasheets
- BUJ105A,127
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUJ105A,127 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 13 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 800mA, 4A.Device displays Collector Emitter Breakdown (400V maximal voltage).
BUJ105A,127 Features
the DC current gain for this device is 13 @ 500mA 5V
the vce saturation(Max) is 1V @ 800mA, 4A
BUJ105A,127 Applications
There are a lot of WeEn Semiconductors
BUJ105A,127 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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