BUJ105AB118
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- Mfr.Part #
- BUJ105AB118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- NOW WEEN - BUJ105AB - POWER BIPO
- Stock
- 5,600
- In Stock ：
- 5,600
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 13 @ 500mA 5V
- Power - Max :
- 125W
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100μA
- Reference Standard :
- IEC-134
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 800mA, 4A
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- RoHS Compliant
- Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 8A
- Datasheets
- BUJ105AB118
Specialized ICs NXP Semiconductors BUJ105AB118 Overview
The Specialized ICs NXP Semiconductors BUJ105AB118 is a high-performance NPN bipolar junction transistor designed for robust and efficient performance in high-voltage applications. This device is encapsulated in a TO-263-3, D2Pak package, which offers enhanced thermal and electrical characteristics suitable for surface mounting. With a collector-emitter breakdown voltage of 400V, it ensures reliability and stability under rigorous conditions. The transistor operates efficiently up to a junction temperature of 150°C, making it ideal for challenging environments. Furthermore, its low collector-emitter saturation voltage of 1V at currents up to 800mA facilitates reduced power dissipation and improved energy efficiency.
Key Features
The Specialized ICs NXP Semiconductors BUJ105AB118 boasts several key features that make it suitable for high-demand applications:
- High breakdown voltage of 400V, allowing for use in high-voltage applications.
- Maximum collector current of up to 4A, supporting heavier load conditions.
- Low Vce(sat) of 1V at 800mA to 4A, enhancing power efficiency.
- Maximum operating temperature of 150°C, suitable for high-temperature operations.
- Surface-mount TO-263-3, D2Pak package facilitates efficient assembly and heat dissipation.
Applications
The Specialized ICs NXP Semiconductors BUJ105AB118 is versatile in its use across a variety of demanding applications:
- Inverters and power regulators, where robust voltage handling and thermal performance are crucial.
- Interfaces and driver circuits, particularly in automotive and industrial settings.
- High-frequency switching circuits, enhancing performance with low saturation voltage.
- Protection circuits, where stability under high voltage is required.
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