BUJ103A,127
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- Mfr.Part #
- BUJ103A,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220AB
- Stock
- 8,267
- In Stock ：
- 8,267
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Terminal Position :
- Single
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- JESD-609 Code :
- e3
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 13 @ 500mA 5V
- Packaging :
- Tube
- Transistor Type :
- NPN
- Surface Mount :
- No
- Configuration :
- Single
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Power - Max :
- 80W
- Package / Case :
- TO-220-3
- Reference Standard :
- IEC-60134
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 600mA, 3A
- Current - Collector (Ic) (Max) :
- 4A
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Datasheets
- BUJ103A,127
NPN 150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUJ103A,127 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 13 @ 500mA 5V.When VCE saturation is 1V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).The device has a 400V maximal voltage - Collector Emitter Breakdown.
BUJ103A,127 Features
the DC current gain for this device is 13 @ 500mA 5V
the vce saturation(Max) is 1V @ 600mA, 3A
BUJ103A,127 Applications
There are a lot of WeEn Semiconductors
BUJ103A,127 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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