BUJ100,412
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- Mfr.Part #
- BUJ100,412
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO92
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- O-PBCY-T3
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Reference Standard :
- IEC-134
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 9 @ 750mA 5V
- RoHS Status :
- RoHS Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100μA
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Base Part Number :
- BUJ100
- Number of Elements :
- 1
- Power - Max :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 150mA, 750mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheets
- BUJ100,412
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BUJ100,412 Overview
In this device, the DC current gain is 9 @ 750mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 150mA, 750mA.The device exhibits a collector-emitter breakdown at 400V.
BUJ100,412 Features
the DC current gain for this device is 9 @ 750mA 5V
the vce saturation(Max) is 1V @ 150mA, 750mA
BUJ100,412 Applications
There are a lot of WeEn Semiconductors
BUJ100,412 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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