BUJ100LR,126
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- Mfr.Part #
- BUJ100LR,126
- Manufacturer
- WeEn Semiconductors Co., Ltd
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO92-3
- Stock
- 509
- In Stock ：
- 509
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- Manufacturer :
- WeEn Semiconductors Co., Ltd
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 400mA 5V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Base Part Number :
- BUJ100
- Mounting Type :
- Through Hole
- Power - Max :
- 2.1W
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 750mA
- Current - Collector (Ic) (Max) :
- 1A
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1mA
- Datasheets
- BUJ100LR,126
,TO-226_straightlead.jpg)
NPN 150°C TJ 1mA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BUJ100LR,126 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 400mA 5V.When VCE saturation is 1.5V @ 250mA, 750mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 400V maximal voltage - Collector Emitter Breakdown.
BUJ100LR,126 Features
the DC current gain for this device is 10 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 250mA, 750mA
BUJ100LR,126 Applications
There are a lot of WeEn Semiconductors
BUJ100LR,126 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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