BSZ096N10LS5ATMA1
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- Mfr.Part #
- BSZ096N10LS5ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 40A TSDSON
- Stock
- 2,826
- In Stock ：
- 2,826
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- * Fullname:
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2013
- JESD-609 Code :
- e3
- Terminal Form :
- NO LEAD
- Factory Lead Time :
- 18 Weeks
- Drain-source On Resistance-Max :
- 0.0096Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 160A
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Drain Current-Max (Abs) (ID) :
- 11A
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- S-PDSO-N3
- DS Breakdown Voltage-Min :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-PowerTDFN
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Operating Temperature (Min) :
- -55°C
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- yes
- Avalanche Energy Rating (Eas) :
- 82 mJ
- Datasheets
- BSZ096N10LS5ATMA1
Tape & Reel (TR) 8-PowerTDFN
BSZ096N10LS5ATMA1 Description
BSZ096N10LS5ATMA1 is an OptiMOSTM5 Power-Transistor. Infineon's OptiMOS? 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The BSZ096N10LS5ATMA1 low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
BSZ096N10LS5ATMA1 Features
-
Low RDS(on) in small package
-
Low gate charge
-
Lower output charge
-
Logic level compatibility
-
Higher switching frequency
BSZ096N10LS5ATMA1 Applications
-
healthcare
-
automotive
-
manufacturing industries
-
Adapter
-
Telecom
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