BSZ0902NSATMA1
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- Mfr.Part #
- BSZ0902NSATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 19A/40A TSDSON
- Stock
- 317,878
- In Stock ：
- 317,878
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerTDFN
- Turn-Off Delay Time :
- 21 ns
- Series :
- OptiMOS™
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 4.2 ns
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 15V
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 18 Weeks
- Vgs (Max) :
- ±20V
- Lead Free :
- Contains Lead
- Power Dissipation-Max :
- 2.1W Ta 48W Tc
- Max Dual Supply Voltage :
- 30V
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 20A, 10V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta 40A Tc
- Continuous Drain Current (ID) :
- 19A
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 3.6 ns
- Halogen Free :
- Halogen Free
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 2.1W
- Threshold Voltage :
- 2V
- Rise Time :
- 5.2ns
- Datasheets
- BSZ0902NSATMA1
N-Channel Tape & Reel (TR) 2.6m Ω @ 20A, 10V ±20V 1700pF @ 15V 26nC @ 10V 8-PowerTDFN
BSZ0902NSATMA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1700pF @ 15V.This device conducts a continuous drain current (ID) of 19A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.2 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 30V power, it supports a dual voltage supply of up to maximum.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
BSZ0902NSATMA1 Features
a continuous drain current (ID) of 19A
the turn-off delay time is 21 ns
a threshold voltage of 2V
BSZ0902NSATMA1 Applications
There are a lot of Infineon Technologies
BSZ0902NSATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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