BSZ088N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

8

JESD-30 Code :

R-PDSO-N5

Max Dual Supply Voltage :

30V

Rise Time :

3ns

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

11A Ta 40A Tc

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

11A

Lead Free :

Contains Lead

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 15V

Number of Terminations :

5

Drain-source On Resistance-Max :

0.0097Ohm

Vgs (Max) :

±20V

Power Dissipation-Max :

2.1W Ta 35W Tc

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Halogen Free :

Halogen Free

Package / Case :

8-PowerTDFN

Published :

2011

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Power Dissipation :

2.1W

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

40A

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

Factory Lead Time :

18 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Elements :

1

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

25 mJ