BSZ088N03MSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Published :

2011

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Pin Count :

8

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-N5

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.1W Ta 35W Tc

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 250μA

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

11A Ta 40A Tc

Number of Elements :

1

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Package / Case :

8-PowerTDFN

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

Terminal Position :

Dual

Number of Pins :

8

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Contains Lead

ECCN Code :

EAR99

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0097Ohm

Power Dissipation :

2.1W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Drain Current-Max (Abs) (ID) :

40A

Pbfree Code :

No

Number of Terminations :

5

Continuous Drain Current (ID) :

11A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Dual Supply Voltage :

30V

Rise Time :

3ns

Avalanche Energy Rating (Eas) :

25 mJ

Contact Plating :

Tin