BSZ084N08NS5ATMA1
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- Mfr.Part #
- BSZ084N08NS5ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 40A TSDSON
- Stock
- 7,543
- In Stock ：
- 7,543
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 8.4m Ω @ 20A, 10V
- JESD-30 Code :
- S-PDSO-N3
- Continuous Drain Current (ID) :
- 40A
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 13 ns
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 5 ns
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 80V
- Max Dual Supply Voltage :
- 80V
- Published :
- 2013
- Element Configuration :
- Single
- Number of Pins :
- 8
- Terminal Form :
- NO LEAD
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 5ns
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 18 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1820pF @ 40V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Package / Case :
- 8-PowerTDFN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- OptiMOS™
- Vgs(th) (Max) @ Id :
- 3.8V @ 31μA
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Power Dissipation-Max :
- 63W Tc
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 76 mJ
- Halogen Free :
- Halogen Free
- Turn-Off Delay Time :
- 25 ns
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BSZ084N08NS5ATMA1
N-Channel Tape & Reel (TR) 8.4m Ω @ 20A, 10V ±20V 1820pF @ 40V 25nC @ 10V 8-PowerTDFN
BSZ084N08NS5ATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 76 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1820pF @ 40V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 40A amps.In this device, the drain-source breakdown voltage is 80V and VGS=80V, so the drain-source breakdown voltage is 80V in this case.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 80V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
BSZ084N08NS5ATMA1 Features
the avalanche energy rating (Eas) is 76 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 25 ns
BSZ084N08NS5ATMA1 Applications
There are a lot of Infineon Technologies
BSZ084N08NS5ATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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