BSZ075N08NS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Published :

2013

Turn On Delay Time :

10 ns

Factory Lead Time :

18 Weeks

Drain-source On Resistance-Max :

0.0075Ohm

Power Dissipation-Max :

69W Tc

Continuous Drain Current (ID) :

40A

Element Configuration :

Single

Pbfree Code :

yes

Halogen Free :

Halogen Free

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 20A, 10V

Max Dual Supply Voltage :

80V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2080pF @ 40V

FET Type :

N-Channel

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

29.5nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Turn-Off Delay Time :

19 ns

ECCN Code :

EAR99

Rise Time :

4ns

Fall Time (Typ) :

4 ns

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

S-PDSO-N3

Power Dissipation :

69W

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Elements :

1

Package / Case :

8-PowerTDFN

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.8V @ 36μA