BSZ065N03LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

NO LEAD

Number of Pins :

8

Number of Terminations :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 15V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.1W Ta 26W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-PowerTDFN

Packaging :

Tape and Reel (TR)

Pin Count :

8

Rise Time :

3.4ns

Max Dual Supply Voltage :

30V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Threshold Voltage :

2V

Published :

2012

Transistor Application :

SWITCHING

FET Type :

N-Channel

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-N3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

not_compliant

Terminal Position :

Dual

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Power Dissipation :

2.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

REACH SVHC :

No SVHC

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Pbfree Code :

No

Contact Plating :

Tin

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

12A

Current - Continuous Drain (Id) @ 25°C :

12A Ta 40A Tc

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 20A, 10V

Factory Lead Time :

18 Weeks