BSZ063N04LS6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

160A

Transistor Application :

SWITCHING

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 20A, 10V

Reach Compliance Code :

Compliant

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

25 mJ

DS Breakdown Voltage-Min :

40V

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 10V

Drain-source On Resistance-Max :

0.0088Ohm

Package / Case :

8-PowerTDFN

Drain Current-Max (Abs) (ID) :

40A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

OptiMOS™ 6

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Form :

NO LEAD

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

S-PDSO-N3

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 20V

Power Dissipation-Max :

2.5W Ta 38W Tc

Drain to Source Voltage (Vdss) :

40V

Current - Continuous Drain (Id) @ 25°C :

15A Ta 40A Tc

Number of Elements :

1

Factory Lead Time :

18 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Vgs (Max) :

±20V