BSZ060NE2LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Pbfree Code :

No

Turn-Off Delay Time :

11 ns

Contact Plating :

Tin

Power Dissipation-Max :

2.1W Ta 26W Tc

Number of Terminations :

3

Power Dissipation :

2.1W

Gate Charge (Qg) (Max) @ Vgs :

9.1nC @ 10V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

12A Ta 40A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 12V

Rise Time :

2.2ns

Threshold Voltage :

2V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

JESD-30 Code :

S-PDSO-N3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Max Dual Supply Voltage :

25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

2.5 ns

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

1.8 ns

Factory Lead Time :

18 Weeks

Continuous Drain Current (ID) :

12A

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

6m Ω @ 20A, 10V

Transistor Application :

SWITCHING

Pin Count :

8

Number of Pins :

8

Published :

2013

ECCN Code :

EAR99

Terminal Position :

Dual

FET Type :

N-Channel

Case Connection :

DRAIN