BSZ058N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

3.8ns

Power Dissipation-Max :

2.1W Ta 45W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Terminations :

5

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

Case Connection :

DRAIN

Contact Plating :

Tin

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0064Ohm

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

14A Ta 40A Tc

ECCN Code :

EAR99

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-N5

Pbfree Code :

No

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Max Dual Supply Voltage :

30V

Terminal Form :

NO LEAD

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 250μA

Avalanche Energy Rating (Eas) :

55 mJ

Series :

OptiMOS™

Continuous Drain Current (ID) :

14A

Drain Current-Max (Abs) (ID) :

40A

Power Dissipation :

2.1W

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Number of Pins :

8

Published :

2011

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ